Product Name: EC2005P, EC2025P and EC2006P ECAPs – Silicon Capacitors

Manufacturer: Empower Semiconductor

Product Category: Electronic Components

Supporting Documentation (if available)

Empower Semiconductor’s latest embedded silicon capacitors (ECAPs™) are engineered to address one of the most critical challenges in modern AI and high-performance computing (HPC) systems: maintaining power integrity under extreme current density and ultra-fast transient conditions. These devices introduce a new class of passive component by relocating high-density capacitance from the PCB into the semiconductor package or substrate, fundamentally improving power delivery network (PDN) performance.

Functionally, these ECAP capacitors enable:
- Improved PDN impedance control across a broad frequency range
- Faster transient response for high-current AI workloads
- Reduced reliance on large MLCC arrays, simplifying layout and BOM
- Enhanced power and signal integrity, supporting higher compute performance

These new ECAPs complete an existing portfolio of silicon capacitors solution and are optimized for package-level integration with the following capacitance:
- EC2005P: 9.34 µF in a 2 mm × 2 mm footprint
- EC2025P: 18.68 µF in a 4 mm × 2 mm footprint
- EC2006P: 36.8 µF in a 4 mm × 4 mm footprint

These capacitance-to-area ratios reflect a high capacitance density (>2 µF/mm² class), enabling designers to deploy significant decoupling within a minimal footprint directly inside the processor substrate.

The ECAP technology integrates multiple capacitive elements into a single device using advanced deep trench-based structures. This approach enables ultra-low equivalent series inductance (ESL) and equivalent series resistance (ESR)—key parameters that determine PDN impedance and transient response. The resulting electrical performance delivers ultra-low impedance across a wide frequency bandwidth (approximately 10 MHz to 10 GHz), ensuring effective decoupling for both core and high-speed I/O power domains. This wideband behavior is essential for AI processors, where rapid load transients and high switching frequencies demand instantaneous current delivery and tight voltage regulation.

A defining feature of ECAP capacitors is their embedded integration capability. Unlike conventional MLCCs mounted on the PCB, ECAP devices are designed for tight dimensional tolerances and compatibility with advanced packaging flows, including 2.5D and 3D integration. Their silicon-based construction supports ultra-thin profiles (down to tens of microns), making them suitable for space-constrained, high-density designs such as required for being placed directly within the processor substrate or interposer. This dramatically reduces the electrical distance between the capacitor and the load, minimizing loop inductance and enabling faster transient response. As a result, designers can achieve lower voltage droop, improved stability, and tighter power margins, even under extreme di/dt conditions. This additional intermediate decoupling layer between on-die capacitance and board-level capacitors, enables more effective impedance shaping across the PDN. This layered approach allows engineers to optimize capacitance distribution and meet target impedance requirements more efficiently.

In addition to performance advantages, ECAP capacitors offer exceptional electrical stability. Unlike MLCCs, they exhibit:
- No AC or DC bias derating
- No temperature or aging-related capacitance loss
- Consistent behavior across operating conditions

This stability enables more accurate capacitance budgeting and reduces the need for overdesign, improving both efficiency and predictability in system design.

By embedding high-density, low-parasitic capacitance directly at the package level, ECAP technology addresses the limitations of traditional board-level decoupling. This makes it a critical enabler for next-generation AI and HPC platforms, where power delivery performance increasingly defines overall system performance.


ECAPs: Enabling new levels of Power and Signal Integrity
- Deep trench capacitor technology
- Single or multi-domains capacitors
- Ultra-low ESL
- Less than 5pH
- Ultra-low ESR
- Wide bandwidth 10MHz-10GHz
- High capacitance density form factor
- Ultra-thin profile: down to 50μm
- Custom profile available
- Substrate embedding
- Die/land side mounting
- Stability and reliability
- No DC or AC derating
- No aging or temperature derating
- Standard & custom solutions


EC2005P Specs:
- Capacitors: 2
- Capacitance: 9.36μF, 2x 4.68μF
- Max Operating Voltage: 1.2V
- Package Size: 2.00 x 2.00 mm
- Package + Pad Thickness: 762 µm


EC2025P Specs:
- Capacitors: 4
- Capacitance: 18.72μF, 4x 4.68μF
- Max Operating Voltage: 1.2V
- Package Size: 4.04 x 2.00 mm
- Package + Pad Thickness: 762 µm


EC2006P Specs:
- Capacitors: 4
- Capacitance: 36.4μF, 4x 9.1μF
- Max Operating Voltage: 1.2V
- Package Size: 4.00 x 4.00 mm
- Package + Pad Thickness: 762 µm